New progress in research of highly sensitive diamond thermistor devices

Frontier progress and key industrialization technologies of quantum sensing based on diamond NV color centers

Diamond NV color centers are currently the most excellent solid-state spin quantum materials. Thanks to the high transparency, durability, acid and alkali resistance of diamond, NV color centers have demonstrated significant application value in high-resolution magnetic field imaging, biophysical research, extreme condition sensing, medical diagnosis and other fields. However, moving from the laboratory to industrialization still requires overcoming some technical challenges. This report summarizes some important applications of diamond NV color centers that have been achieved so far, as well as some highly promising application prospects in the future; And listed some techniques that can further optimize the preparation of diamond substrates to enhance the performance of NV color centers and promote related sensing applications.

Research progress on gate oxygen interface of reverse channel diamond power devices

We focus on the modification of OH terminals on diamond surfaces, the preparation and key process development of anti channel diamond MOSFETs, and the characterization of oxide/diamond interfaces and near interface traps. A key study was conducted on the gate oxygen interface that affects device mobility based on the developed OH terminated diamond surface. Specifically, we use high-low C-V method, simultaneous C-V method, and conductivity method considering surface potential fluctuations to analyze the properties of interface traps. For wide bandgap semiconductors, near interface traps near the semiconductor band edge can also capture charge carriers, reducing channel mobility and device stability. Therefore, we focused on studying the frequency dependence of capacitance and conductivity under cumulative conditions, established an equivalent model, and quantitatively evaluated the distribution of near interface traps near the diamond valence band. The systematic study of diamond MOS gate oxygen interface is crucial for exploring methods to improve the performance of MOSFET devices.

Preparation and photoelectric detection performance of one-dimensional diamond nanowires

Diamond is an excellent semiconductor material for solar blind ultraviolet detectors due to its advantages such as ultra wide bandwidth, high thermal conductivity, and radiation resistance hardness. In order to achieve excellent solar blind ultraviolet detection performance, a large amount of research is currently focused on optimizing the structural design of devices (such as metal M-semiconductor S-metal M-type structures or p-n junctions with photoconductivity or Schottky contacts). As is well known, the inability of diamond to achieve effective n-type doping poses challenges in the preparation of pn junction devices. The uneven distribution of electric fields in single crystal blocks or thin films in MSM devices prevents further improvement in the device's photoresponsivity. To address this issue, this study focuses on one-dimensional single crystal diamond nanowires with large specific surface area and strong light absorption capability. Based on the directional transmission of photo generated carriers along the surface of the nanowires, the device's photoresponsivity is improved; At the same time, a method for preparing high-quality single crystal diamond nanowires based on highly preferred orientation of polycrystalline diamond films is proposed. This method is divided into two steps. The first step is to prepare [001] oriented micro/nano diamond composite films using microwave plasma chemical vapor deposition. The second step is to selectively etch the nano diamonds in the above films using high-temperature air annealing, retaining the micro diamond particles and forming a large number of single crystal diamond nanowires. The response of MSM devices prepared from single crystal diamond nanowires reaches>103 A/W at 220nm.